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PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 - 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -25 -30 60 50 Features * * Broadband internal matching Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = -34 dBc Typical CW performance, 2170 MHz, 30 V - Output power at P-1dB = 150 W - Efficiency = 55% Integrated ESD protection: Human Body Model, Class 2 (minimum) Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power Pb-Free and RoHS compliant ACP (dBc) -35 -40 -45 -50 -55 31 33 35 37 39 Efficiency 40 30 Drain Efficiency (%) * ACP Low 20 10 * * * ACP Up 41 43 45 47 49 0 Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 17 27 -- Typ 18 32 -34 Max -- -- -32 Unit dB % dBc D IMD All published data at TCASE = 25C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F RF Characteristics (cont.) Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min -- -- -- Typ 18 40 -30 Max -- -- -- Unit dB % dBc D IMD DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Conditions VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 -- -- -- 1.6 -- Typ -- -- -- 0.08 2.1 -- Max -- 1.0 10.0 -- 3.0 1.0 Unit V A A V A On-State Resistance Operating Gate Voltage Gate Leakage Current VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.2 A VGS = 10 V, V DS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 150 W CW) Symbol VDSS VGS TJ TSTG RJC Value 65 -6 to +10 200 -40 to +150 0.29 Unit V V C C C/W Ordering Information Type and Version PTFB211501E V4 Package Outline H-36248-2 Package Description Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs PTFB211501E V4 R250 H-36248-2 PTFB211501F V4 PTFB211501F V4 R250 H-37248-2 H-37248-2 *See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Typical Performance (data taken in production test fixture) Single-carrier WCDMA, 3GPP Broadband VDD = 30 V, IDQ = 1.20 A, POUT = 40 W 50 -10 Two-tone Broadband VDD = 30 V, IDQ = 1.20 A, POUT = 63 W 55 -10 -15 IRL (dB) / ACP Up (dBc) Gain / Efficiency (dB / %) IRL Gain / Efficiency (dB / %) 50 45 40 35 30 25 20 40 35 30 25 20 15 2080 -20 -25 Efficiency IMD3 -20 -25 -30 -35 -40 Efficiency -30 -35 ACP Gain -40 -45 2200 Gain -45 2100 2120 2140 2160 2180 -50 15 2070 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Frequency (MHz) Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz 19 50 40 -10 -20 Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz 55 18 Efficiency 45 35 Efficiency (%) Gain (dB) 17 20 16 10 0 40 42 44 46 48 50 52 54 IMD (dBc) Gain 30 -30 -40 -50 -60 40 42 44 46 48 50 52 54 IMD3 25 15 5 Efficiency 15 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 3 of 13 Rev. 02, 2009-11-19 Efficiency (%) Return Loss (dB), IMD (dBc) 45 -15 IRL PTFB211501E PTFB211501F Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz -20 2170 MHz 2110 MHz 2140 MHz Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, = 2170 MHz 20 19 65 55 45 35 IMD (dBc) Gain (dB) 18 17 16 15 -40 Gain -50 Efficiency 25 15 -60 41 43 45 47 49 51 53 41 43 45 47 49 51 53 Output Power, PEP (dBm) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, = 2170 MHz 19 18 60 50 40 30 +25C +85C -10C 46 47 48 49 50 51 52 20 10 42 43 44 45 19 CW Performance Gain vs. Output Power VDD = 30 V, = 2170 MHz IDQ = 1.40 A Drain Efficiency (%) Power Gain (dB) 18 Gain (dB) 17 16 15 Gain IDQ = 1.20 A 17 IDQ = 0.80 A Efficiency 14 16 41 43 45 47 49 51 53 Output Power (dBm) Output Power (dBm) Data Sheet 4 of 13 Rev. 02, 2009-11-19 Drain Efficiency (%) -30 PTFB211501E PTFB211501F Typical Performance (cont.) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.20 A, -20 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 1.03 1 = 2170 MHz, 2 = 2169 MHz Normalized Bias Voltage (V) 3rd Order 1.02 1.01 1 0.99 0.98 0.97 -20 -30 2A 4A 8A 10 A 12 A 14 A 16 A 5th IMD (dBc) -40 -50 7th -60 40 45 50 55 0 20 40 60 80 100 Output Power, PEP (dBm) Case Temperature (C) Broadband Circuit Impedance ST D 0.0 Z Source Z Load - WAVE LE NGTH Z0 = 50 0.1 G S D LOAD S TOW AR Z Load 0.1 NGT H 2080 MHz Frequency MHz 2200 2170 2140 2110 2080 R Z Source jX -8.14 -8.34 -8.53 -8.74 -8.95 R 4.29 4.36 4.45 4.55 4.67 Z Load jX -4.39 -4.50 -4.61 -4.72 -4.84 1.49 1.52 1.55 1.58 1.62 2200 MHz <--- ELE WAV Z Source 0. 2 0. 3 Data Sheet 5 of 13 Rev. 02, 2009-11-19 0.2 PTFB211501E PTFB211501F Reference Circuit VGS1 C105 10000000 pF TL108 2 3 1 S2 8 R803 1000 Ohm 1 In NC Out NC 3 6 C802 1000 pF 4 2 7 5 R802 1200 Ohm 1 C803 1000 pF S1 C801 1000 pF S3 R 804 1000 Ohm 3 2 C 4 B S 3 R 102 2000 Ohm TL 112 TL107 R101 5100 Ohm 2 3 1 3 2 1 3 2 1 C106 10000 pF C102 10 pF 1 3 2 R801 1300 Ohm E TL111 TL110 TL109 TL101 C104 1000000 pF C103 10000 pF TL105 TL102 TL 128 TL 104 TL103 3 2 1 TL 116 TL 115 R103 10 Ohm TL114 TL 113 TL106 TL 127 RF IN TL134 1 3 2 TL118 TL133 TL 126 C101 10 pF TL 124 TL132 TL120 TL131 1 3 2 TL125 TL130 TL122 TL 117 TL 129 3 2 1 b2 1 1 5 0 1 ef v 4 _b d i n _ 1 1- 18 - 2009 TL121 GATE DUT TL 119 C107 0.4 pF TL123 C108 0.4 pF Reference circuit input schematic for = 2170 MHz TL225 TL222 TL234 1 3 2 TL219 TL237 TL242 TL235 TL241 TL230 1 3 2 TL231 1 3 2 TL228 1 3 2 TL238 VDD1 TL218 TL209 C207 10 pF C205 20000 pF C204 1000000 pF C210 10000000 pF TL207 DRAIN DUT TL216 1 2 TL210 3 4 TL202 TL203 TL204 TL201 1 3 2 TL212 TL205 TL213 C202 10 pF TL214 TL206 TL215 RF OUT TL211 TL208 C201 1.2 pF C206 20000 pF TL221 3 2 1 C208 10 pF TL217 TL224 TL223 TL233 C203 1000000 pF TL229 3 2 1 2 3 1 b C209 10000000 pF TL227 211501 ef-v4 _bdout _ 1 1- 18 -2009 TL236 TL220 TL226 TL240 TL232 3 1 TL239 VDD2 2 Reference circuit output schematic for = 2170 MHz Data Sheet 6 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) VDD C802 R801 C105 C106 R102 + 10 F VDD S3 R803 R804 C803 + C801 S2 R802 S1 C207 + R801 R101 C104 C103 C205 C204 10 F C102 C210 R103 C107 C101 C108 C201 C202 C209 10 F C203 C206 C208 PTFB211501 EF TMM4, .030 (62) PTFB211501EF TMM4, .030 b 211501 ef- v1_ C D_ 11 + VDD (62) - 18 - 2 0 0 9 Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Data Sheet 7 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Circuit Assembly Information DUT PCB PTFB211501E or PTFB211501F LTN/PTFB211501EF 0.76 mm [.030"] thick, r = 4.5 LDMOS Transistor TMM4 2 oz. copper Component Input C101, C102 C103, C106 C104 C105 C107, C108 C801, C802, C803 R101 R102 R103 R801 R802 R803, R804 S1 S2 S3 Description Chip capacitor, 10 pF Chip capacitor, 0.01 F Chip capacitor, 1 F Capacitor, 10 F Chip capacitor, 0.4 pF Chip capacitor, 1000 pF Resistor, 5100 Resistor, 2000 Resistor, 10 Resistor, 1300 Resistor, 1200 Resistor, 1000 Transistor Voltage regulator Potentiometer, 2k Suggested Manufacturer ATC ATC Digi-Key Digi-Key ATC Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Infineon Technologies National Semiconductor Digi-Key P/N 100B100JW500X 200B103MW50X 445-1411-2-ND 399-1655-2-ND 100B0R4CW500X PCC1772CT-ND P5.1KECT-ND P2.0KECT-ND P10ECT-ND P1.3KECT-ND P1.2KECT-ND P1.0KECT-ND BCP56 LM7805 3224W-202ECT-ND Output C201 C202 C203, C204 C205, C206 C207, C208 C209, C210 Chip capacitor, 1.2 pF Chip capacitor, 10 pF Chip capacitor, 1 F Chip capacitor, 0.02 F Chip capacitor, 10 pF Capacitor, 10 F ATC ATC Digi-Key ATC ATC Garrett Electronics 100B1R2CW500X 100B100JW500X 445-1411-2-ND 200B203MW50X 100B100JW500X TPSE106K050R0400 Data Sheet 8 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Line Input TL101 TL102 TL103 TL104 TL105 TL106, TL128 TL107 TL108 TL109, TL112 TL110, TL111 TL113 TL114, TL115 TL116 TL117 TL118 TL119, TL123 TL120 TL121 TL122 TL124, TL126 TL125 TL127 TL129 TL130 TL131 TL132 TL133 TL134 Electrical Characteristics 0.041 , 40.30 0.033 , 65.15 0.027 , 65.15 0.047 , 65.15 0.000 , 40.30 0.040 , 53.88 0.089 , 20.46 0.021 , 30.35 0.035 , 30.35 0.025 , 65.15 0.012 , 46.07 0.236 , 65.15 0.186 , 50.98 0.000 , 40.30 0.014 , 40.30 0.062 , 6.87 0.020 , 11.38 0.017 , 34.60 0.155 , 40.30 0.127 , 50.98 0.013 , 6.87 0.027 , 40.30 Dimensions: mm Dimensions: mils W1 = 2.032, W2 = 2.032, W3 = 3.048 W = 0.889, L = 2.540 W1 = 0.889, W2 = 0.889, W3 = 2.032 W = 0.889, L = 3.556 W = 2.032, L = 0.025 W = 0.889 W1 = 1.270, W2 = 1.270, W3 = 3.048 W1 = 5.080, W2 = 5.080, W3 = 6.350 W = 3.048, L = 1.524 W1 = 3.048, W2 = 3.048, W3 = 2.540 W = 0.889, L = 1.905 W = 1.651, L = 0.889 W = 0.889, L = 18.034 W1 = 10.160, W2 = 17.780 W = 1.397, L = 13.970 W = 2.032, L = 0.025 W = 2.032, L = 1.016 W = 17.780, L = 4.191 W = 10.160, L = 1.397 W = 2.540, L = 1.270 W = 2.032, L = 11.430 W = 1.397, L = 9.525 W1 = 17.780, W2 = 17.780, W3 = 0.889 W1 = 2.032, W2 = 10.160 W1 = 2.032, W2 = 2.032, W3 = 2.032 W1 = 2.540, W2 = 2.032 W1 = 1.397, W2 = 2.540 W1 = 80, W2 = 80, W3 = 120 W = 35, L = 100 W1 = 35, W2 = 35, W3 = 80 W = 35, L = 140 W = 80, L = 1 W = 35 W1 = 50, W2 = 50, W3 = 120 W1 = 200, W2 = 200, W3 = 50 W = 120, L = 60 W1 = 120, W2 = 120, W3 = 100 W = 35, L = 75 W = 65, L = 35 W = 35, L = 710 W1 = 400, W2 = 700 W = 55, L = 550 W = 80, L = 1 W = 80, L = 40 W = 700, L = 165 W = 400, L = 55 W = 100, L = 50 W = 80, L = 450 W = 55, L = 375 W1 = 700, W2 = 700, W3 = 35 W1 = 80, W2 = 400 W1 = 80, W2 = 80, W3 = 80 W1 = 100, W2 = 80 W1 = 55, W2 = 100 W1 = 55, W2 = 55, W3 = 80 0.027 ,50.98 W1 = 1.397, W2 = 1.397, W3 = 2.032 Data Sheet 9 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Line Output TL201 TL202 (taper) TL203 (taper) TL204 (taper) TL205 TL206 TL207 TL208, TL209 TL210 TL211, TL217, TL218 TL212 TL213, TL214 TL215 TL216 TL219, TL221 TL220, TL242 TL222, TL223 TL224, TL225 TL226, TL235 TL227, TL228 TL229, TL231 TL230, TL232 TL233, TL234 TL236, TL237 TL238, TL239, TL240, TL241 Electrical Characteristics 0.027 , 43.96 0.016 , 4.88 / 5.86 0.058 , 5.86 / 32.33 0.017 , 32.33 / 43.96 Dimensions: mm Dimensions: mils W1 = 1.778, W2 = 1.778, W3 = 2.032 W1 = 25.654, W2 = 21.107, L = 1.041 W1 = 21.107, W2 = 2.794, L = 3.937 W1 = 2.794, W2 = 1.778, L = 1.270 W1 = 1.778, W2 = 2.540 W1 = 2.540, W2 = 1.397 W1 = 70, W2 = 70, W3 = 80 W1 = 1010, W2 = 831, L = 41 W1 = 831, W2 = 110, L = 155 W1 = 110, W2 = 70, L = 50 W1 = 70, W2 = 100 W1 = 100, W2 = 55 W = 1010, L = 1 W = 50, L = 265 W = 1010, L = 75 W = 80, L = 1 W = 70, L = 260 W = 100, L = 50 W = 55, L = 1119 W1 = 1010, W2 = 50, W3 = 1010, W4 = 50 W = 50, L = 185 W = 120, L = 185 W = 50, L = 620 W = 50 W1 = 120, W2 = 360 W1 = 360, W2 = 360, W3 = 200 W1 = 360, W2 = 360, W3 = 120 W1 = 360, W2 = 360, W3 = 100 W1 = 50, W2 = 50, W3 = 80 W1 = 50, W2 = 120 W = 360, L = 5 0.000 , 4.88 0.089 , 53.88 0.028 , 4.88 0.000 , 40.30 0.089 , 43.96 0.017 , 34.60 0.378 , 50.98 W = 25.654, L = 0.025 W = 1.270, L = 6.731 W = 25.654, L = 1.905 W = 2.032, L = 0.025 W = 1.778, L = 6.604 W = 2.540, L = 1.270 W = 1.397, L = 28.423 W1 = 25.654, W2 = 1.270, W3 = 25.654, W4 = 1.270 0.062 , 53.88 0.065 , 30.35 0.209 , 53.88 W = 1.270, L = 4.699 W = 3.048, L = 4.699 W = 1.270, L = 15.748 W = 1.270 W1 = 3.048, W2 = 9.144 0.073 , 12.48 0.044 , 12.48 0.037 , 12.48 0.027 , 53.88 0.002 , 12.48 W1 = 9.144, W2 = 9.144, W3 = 5.080 W1 = 9.144, W2 = 9.144, W3 = 3.048 W1 = 9.144, W2 = 9.144, W3 = 2.540 W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 1.270, W2 = 3.048, W = 9.144, L = 0.127 Data Sheet 10 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Package Outline Specifications Package H-36248-2 45 X 2.720 [45 X .107] C L D S FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] .370+0.004 19.4310.510 -0.006 [.7650.020] 4.8260.510 [.1900.020] [ ] C L G 2X R1.626 [R.064] 4X R1.524 [R.060] 2X 12.700 [.500] 27.940 [1.100] SPH 1.575 [.062] 1.016 [.040] 19.8120.200 [.7800.008] 3.6320.380 0.0381 [.0015] -AC L C66065-A2322-C001-01-0027_h-36248-2_11-11-09 34.036 [1.340] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Data Sheet 11 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Package Outline Specifications (cont.) Package H-37248-2 [45 X .107] 4X R0.508+.381 -.127 R.020+0.015 -0.005 4.8260.510 [.1900.020] D [ ] LID 9.398+0.100 -0.150 FLANGE 9.779 .370+0.004 -0.006 [.385] [ ] 19.4310.510 [.7650.020] G 2X 12.700 [.500] SPH 1.575 [.062] 19.8120.200 [.7800.008] 1.016 [.040] 0.0381 [.0015] -AC L C66065-A2323-C001-01-0027_h-37248-2_11-11-09 3.6320.380 [.1430.015] S 20.574 [.810] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 02, 2009-11-19 PTFB211501E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-11-19 2009-07-27, Preliminary Data Sheet Previous Version: Page All Subjects (major changes since last revision) Data sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2009-11-19 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 02, 2009-11-19 |
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